Chemical diffusion by vacancy pairs in intermetallic compounds with the B2structure

Authors
Citation
Ge. Murch, Chemical diffusion by vacancy pairs in intermetallic compounds with the B2structure, PHIL MAG L, 80(8), 2000, pp. 569-575
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE LETTERS
ISSN journal
09500839 → ACNP
Volume
80
Issue
8
Year of publication
2000
Pages
569 - 575
Database
ISI
SICI code
0950-0839(200008)80:8<569:CDBVPI>2.0.ZU;2-G
Abstract
This paper is concerned with the implications of vacancy-pair mechanisms on chemical diffusion intermetallic compounds with the B2 structure, The disc ussion specifically includes the so-called triple-defect mechanism. It is s hown that the vacancy-pair mechanism cannot contribute to chemical diffusio n in the intermetallic compound at the stoichiometric composition. AB. Focu sing on the triple-defect mechanism we extend it to non-stoichiometric comp ositions by including isolated antistructural atoms. By means of Monte Carl o simulation we show that the efficiency of the triple-defect mechanism in providing for chemical diffusion increases linearly with increasing antistr uctural atom composition but the efficiency remains relatively low unless t he composition is highly non-stoichiometric.