Morphology of GaN surfaces and GaN/(Al,Ga)N interfaces grown on 6H-SiC(0001) by reactive molecular beam epitaxy

Authors
Thamm, A Brandt, O Trampert, A Ploog, KH
Citation
A. Thamm et al., Morphology of GaN surfaces and GaN/(Al,Ga)N interfaces grown on 6H-SiC(0001) by reactive molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 73-79
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
180
Issue
1
Year of publication
2000
Pages
73 - 79
Database
ISI
SICI code
0031-8965(20000716)180:1<73:MOGSAG>2.0.ZU;2-0
Abstract
In this paper, we study the morphology of GaN surfaces and GaN/(Al,Ga)N int erfaces fabricated by reactive MBE and the impact of interface roughness on the optical properties of GaN/(Al,Ga)N quantum wells. The emission line is found to broaden monotonously with interface roughness and Al content. An additional broadening effect arising from the combination of (i) the differ ent growth modi of GaN and (Al,Ga)N, and (ii) spiral growth, introducing a local vicinality of the surface, is discovered and will be discussed in det ail.