Effect of pits in InGaN/GaN multi-quantum wells on the strain and in composition segregation

Authors
Yang, ZJ Tong, YZ Zhang, GY Du, XL Fujii, N Jia, AW Yoshikawa, A
Citation
Zj. Yang et al., Effect of pits in InGaN/GaN multi-quantum wells on the strain and in composition segregation, PHYS ST S-A, 180(1), 2000, pp. 81-84
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
180
Issue
1
Year of publication
2000
Pages
81 - 84
Database
ISI
SICI code
0031-8965(20000716)180:1<81:EOPIIM>2.0.ZU;2-2
Abstract
Two different kinds of pits in InGaN/GaN MQWs were observed. They are gener ated by In atoms in the InGaN quantum well layers migrating in opposite dir ections, which may imply different mechanisms for the pit formation.