Lasing in vertical direction in structures with InGaN quantum dots

Authors
Krestnikov, IL Sakharov, AV Lundin, WV Usikov, AS Tsatsulnikov, AF Ledentsov, NN Alferov, ZI Soshnikov, IP Gerthsen, D Plaut, AC Holst, J Hoffmann, A Bimberg, D
Citation
Il. Krestnikov et al., Lasing in vertical direction in structures with InGaN quantum dots, PHYS ST S-A, 180(1), 2000, pp. 91-96
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
180
Issue
1
Year of publication
2000
Pages
91 - 96
Database
ISI
SICI code
0031-8965(20000716)180:1<91:LIVDIS>2.0.ZU;2-1
Abstract
Lasing operation of InGaN/GaN/AlGaN vertical cavity surface emitting lasers (VCSELs) was successfully realized up to room temperature under optical pu mping. VCSELs were grown by metalorganic vapor phase epitaxy and consisted of 2 lambda vertical cavity with twelvefold stacked ultrathin InGaN quantum dot-like insertions in a GaN matrix and strain-compensated Al0.15Ga0.88N/G aN distributed Bragg reflectors.