Light emitting diode with charge asymmetric resonance tunneling

We suggest a system of two wells connected with Charge Asymmetric Resonance Tunneling (CART) as a basic element of light emitting diode (LED) structur e for semiconductors with different masses of electrons and holes. The syst em consists of an emitter of electrons, an emitter of holes and an active l ayer. The hole emitter is coupled with the active in such a way that holes can be freely supplied into the active layer without a barrier. The electro n emitter is coupled to the active layer via a barrier. The barrier design uses the charge asymmetric resonance tunneling phenomenon which allows to m ake the barrier transparent for electrons and blocking for holes. Advantage s of this design are: the increased capture efficiency of the electrons int o the active layer due to direct resonance tunneling of the electrons from the electron emitter on bound electron level in the active quantum well, th e suppression of electron leakage into the hole emitter, the elimination of the parasitic light generated outside the active layer, and the electron e mitter acts also as a good current spreading layer. First results of experi mental investigation and theoretical modeling of the CART LED devices are r eported.