Stimulated emission, electro- and photoluminescence of InGaN/GaN EL-test and SQW heterostructures grown by MOVPE

Electroluminescence test and SQW InGaN/GaN heterostructures were characteri sed with electroluminescence. photoluminescence, photoluminescence excitati on and stimulated emission spectroscopy. It was found that the electrolumin escence emission from the heterostructure edge reveals leaking modes. Laser action under optical excitation was achieved up to room temperature in the SQW heterostructures which showed sharp photoluminescence excitation bands and, thus, a sufficiently homogeneous distribution of the In atoms in the quantum well. We suppose that one of the possible mechanisms of the yellow luminescence excitation in the QW structures is the energy transfer by tunn eling of carriers from the electron states in the InGaN layers into the exc ited states responsible for the yellow luminescence in the GaN barriers.