230 to 250 nm intense emission from AlN/AlGaN quantum wells

We demonstrate 230 to 250 nm efficient ultraviolet (UV) photoluminescence ( PL) from AIN(AlGaN)/AlGaN multi-quantum-wells (MQWs) fabricated by metal-or ganic vapor-phase-epitaxy (MOVPE). Firstly, we show the PL spectra of AlxGa 1-xN on SIC over the whole compositional range, i.e. from GaN to AIN, emitt ing from near band-edge. We observed a drastic intensity enhancement of PL emission by small incorporation of GaN into AIN. We systematically investig ated the PL properties of AlGaN MQWs consisting of wide bandgap AlGaN (Al c ontent: 53 to 100%) barriers. We obtained efficient PL emission of 234 and 245 nm from AlN/Al0.18Ga0.82N and Al0.8Ga0.2N/Al0.18Ga0.82 MQWs, respective ly, at 77 K. The emission from the AlGaN MQWs were several ten times strong er than that of bulk AlGaN. We found that the PL from AlGaN MQW is as effic ient as that of InGaN QWs at 77 K.