First European GaN-based violet laser diode

We report on the realization of room temperature pulsed operation of GaInN multiple quantum well laser diodes. The devices were grown by organometalli c vapor phase epitaxy on SiC substrates. Gain guided laser structures with a 8 mu m wide resonator show a threshold current density of 17 kA/cm(2). Fo r decreasing stripe width the threshold current density increases due to de creasing overlap of electrically pumped area and the lateral extension of t he optical wave. The devices were operated at temperatures up to 90 degrees C with characteristic temperatures of 200 and 290 K fox emission wavelengt hs of 418 and 428 nm, respectively.