Optimised implantation-induced disordering for lowering the threshold current density of II-VI laser diodes

Authors
Schulz, O Strassburg, M Pohl, UW Bimberg, D Itoh, S Nakano, K Ishibashi, A Klude, M Hommel, D
Citation
O. Schulz et al., Optimised implantation-induced disordering for lowering the threshold current density of II-VI laser diodes, PHYS ST S-A, 180(1), 2000, pp. 213-216
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
180
Issue
1
Year of publication
2000
Pages
213 - 216
Database
ISI
SICI code
0031-8965(20000716)180:1<213:OIDFLT>2.0.ZU;2-Y
Abstract
Implantation-induced disordering is applied to define lateral waveguides in ZnCdSe and ZnCdSSe single quantum well lasers. Due to the intermixing-indu ced lateral difference of the refractive index, the optical and electrical characteristics of the laser diodes (LDs) are significantly improved. A red uction of the threshold current density from 276 to 96 A/cm(2) for ZnCdSe L Ds and from 447 to 153 A/cm(2) for ZnCdSSe LDs was achieved.