The red (1.8 eV) luminescence in epitaxially grown GaN

Authors
Hofmann, DM Meyer, BK Alves, H Leiter, F Burkhard, W Romanov, N Kim, Y Kruger, J Weber, ER
Citation
Dm. Hofmann et al., The red (1.8 eV) luminescence in epitaxially grown GaN, PHYS ST S-A, 180(1), 2000, pp. 261-265
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
180
Issue
1
Year of publication
2000
Pages
261 - 265
Database
ISI
SICI code
0031-8965(20000716)180:1<261:TR(ELI>2.0.ZU;2-2
Abstract
The 1.8 eV luminescence band in GaN grown by molecular beam epitaxy is stud ied by photo-luminescence (PL) and magnetic resonance. Optically detected m agnetic resonance (ODMR) shows that deep centres with g = 1.98 and g = 2.01 are involved in the recombination. The results of the PL experiments indic ate that the 1.8 eV recombination can be further fed by shallow centres lik e shallow donors or excitons.