Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanov mode

Authors
Strassburg, M Dworzak, M Hoffmann, A Heitz, R Pohl, UW Bimberg, D Litvinov, D Rosenauer, A Gerthsen, D Kudryashov, I Lischka, K Schikora, D
Citation
M. Strassburg et al., Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanov mode, PHYS ST S-A, 180(1), 2000, pp. 281-285
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
180
Issue
1
Year of publication
2000
Pages
281 - 285
Database
ISI
SICI code
0031-8965(20000716)180:1<281:RGIZSW>2.0.ZU;2-B
Abstract
The optical gain of CdSe/ZnSe structures containing stacks of islands grown in the Stranski-Krastanov mode was studied. The islands have a lateral siz e of approximate to 16 nm and a small height-to-width ratio. Cd contents of approximate to 70% were estimated from transmission electron microscopy in vestigations. The radiative recombination of excitons localised in the isla nds leads to a broad emission band around 2.4 eV. At low temperatures a res onant gain of up to 300 cm(-1) generated by localised transitions was found .