Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE

Authors
Iwata, K Fons, P Niki, S Yamada, A Matsubara, K Nakahara, K Takasu, H
Citation
K. Iwata et al., Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE, PHYS ST S-A, 180(1), 2000, pp. 287-292
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
180
Issue
1
Year of publication
2000
Pages
287 - 292
Database
ISI
SICI code
0031-8965(20000716)180:1<287:IOEPIZ>2.0.ZU;2-P
Abstract
We grew high quality ZnO crystal on a-plane sapphire substrates by RS(radic al source)-MBE. Oxygen polarity (-c) ZnO, which has a nat and smooth surfac e, was obtained under Zn rich conditions at the initial growth of low tempe rature buffer layer. High Zn flux is required to grow ZnO at high temperatu re and form the -c polarity The high temperature ZnO growth has made possib le the improvement of ZnO electrical properties. ZnO epilayers with electro n mobilities of 120 cm(2)/Vs and electron concentrations of 7 x 10(16) cm(- 3) were grown.