Investigations on structural properties of GaInN-GaN multi quantum well structures

We studied the development of V-shaped defects in GaInN-GaN quantum well su perlattices. We observed that these defects could not be suppressed by vary ing growth parameters like strain, In content, GaInN growth temperature etc . However, perfect superlattices without such defects could be grown by cyc ling the temperature between low (for the GaInN wells) and high temperature s (for the GaN barriers). Although a large hydrogen/nitrogen ratio in the c arrier gas seems to hinder the defect formation in GaN-AlGaN superlattices, it was not possible to suppress the defect formation in a GaInN-GaN superl attice by decreasing the total nitrogen flow.