Growth and characterization of a cubic GaN p-n light emitting diode on GaAs (001) substrates

A vertically structured cubic GaN p-n light emitting diode was grown on n-t ype GaAs (001) by plasma assisted molecular beam epitaxy. Elemental Mg and Si beams were used for p- and n-type doping, respectively. Current-voltage and capacitance-voltage measurements of the cubic GaN n(+)-p junction are p erformed at room temperature. The optical properties were characterized by photoluminescence and electroluminescence (EL) at 309 K. The EL is measured through a semitransparent All contact, showing a peak emission at 3.2 eV w ith a full width at halt maximum as narrow as 150 meV. A linear increase of the EL-intensity with increasing current density is observed.