Magnetization quantum tunneling at excited levels for a biaxial spin system in an arbitrarily directed magnetic field

Citation
R. Lu et al., Magnetization quantum tunneling at excited levels for a biaxial spin system in an arbitrarily directed magnetic field, PHYS REV B, 62(5), 2000, pp. 3346-3353
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
5
Year of publication
2000
Pages
3346 - 3353
Database
ISI
SICI code
0163-1829(20000801)62:5<3346:MQTAEL>2.0.ZU;2-C
Abstract
The quantum tunneling of the magnetization vector between excited levels ar e studied theoretically in single-domain ferromagnetic nanoparticles with b iaxial crystal symmetry placed in an external magnetic field at an arbitrar ily directed angle in the ZX plane. By applying the periodic instanton meth od in the spin-coherent-state path-integral representation, we calculate th e tunnel splittings and the tunneling rates between excited levels in the l ow barrier limit for different angle ranges of the external magnetic field (theta(H)= pi/2, pi/2 much less than theta(H) much less than pi, and theta( H)=pi). The temperature dependences of the tunneling frequency and the deca y rate are clearly shown for each case. Our results show that the tunnel sp littings and the tunneling rates depend on the orientation of the external magnetic field distinctly, which provides a possible experimental test for magnetic quantum tunneling in nanometer-scale single-domain ferromagnets.