Relaxation bottleneck and its suppression in semiconductor microcavities

Citation
Ai. Tartakovskii et al., Relaxation bottleneck and its suppression in semiconductor microcavities, PHYS REV B, 62(4), 2000, pp. R2283-R2286
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
4
Year of publication
2000
Pages
R2283 - R2286
Database
ISI
SICI code
0163-1829(20000715)62:4<R2283:RBAISI>2.0.ZU;2-N
Abstract
A polariton relaxation bottleneck is observed in angle-resolved measurement s of photoluminescence emission from a semiconductor microcavity. For low p ower laser excitation, low k polariton states are found to have a very smal l population relative to those at high k. The bottleneck is found to be str ongly suppressed at higher powers in the regime of superlinear emission of the lower polariton states. Evidence for the important role of carrier-carr ier scattering in suppression of the bottleneck is presented.