Resonant states induced by shallow acceptors in uniaxially strained semiconductors

We present a detailed theoretical investigation of resonant states induced by shallow accepters in uniaxially strained semiconductors. By applying Dir ac's approach and using the Coulomb potential of an acceptor impurity, we h ave obtained the amplitude of resonant scattering, the probability of coher ent capture and emission of holes by resonant state, and the characteristic features of the resonant state. The modified dispersion law and density-of -states of valence band by the resonant states have also been derived. The energy dependence of optical transition probability between resonant and lo calized impurity state have been calculated. The theoretical investigation of a new mechanism for carrier population inversion in strained semiconduct ors under an electric field has been presented. It has been shown that the mechanism is the result of a coherent capture emission type inelastic scatt ering of holes by resonant states. The calculation based on our theory for uniaxially strained p-Ge explains the recently observed lasing phenomena in THz frequency region.