Pseudopotential calculations of electron and hole addition spectra of InAs, InP, and Si quantum dots

The electron and hole addition energies, the quasiparticle gap, and the opt ical gap of InAs, InP, and Si quantum dots an calculated using microscopic pseudopotential wave functions. The effects of the dielectric mismatch betw een the quantum dot and the surrounding material are included using a reali stic profile for the dielectric constant epsilon(r). We find that the addit ion energies and the quasiparticle gap depend strongly on the dielectric co nstant of the environment epsilon(out), while the optical gap is rather ins ensitive to epsilon(out). We compare our results with recent tunneling spec troscopy measurements for InAs nanocrystals, finding excellent agreement. O ur calculations for the addition energies and the quasiparticle gap of InP and Si nanocrystals serve as predictions for future experiments.