Electron-spin polarization in magnetically modulated quantum structures

Citation
Y. Guo et al., Electron-spin polarization in magnetically modulated quantum structures, PHYS REV B, 62(4), 2000, pp. 2635-2639
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
4
Year of publication
2000
Pages
2635 - 2639
Database
ISI
SICI code
0163-1829(20000715)62:4<2635:EPIMMQ>2.0.ZU;2-D
Abstract
The spin-dependent electron resonant tunneling through magnetically modulat ed quantum structures has been investigated with and without an external el ectric field. The spin polarization is found to be strongly dependent on th e magnetic configuration, the applied bias, the incident electron energy, a nd the incident wave vector. It is shown that an unpolarized beam of conduc ting electrons can be strongly polarized for an electron tunneling through magnetic-barrier structures, which is an arrangement with unidentical magne tic barriers and wells. The external electric field greatly changes the spi n polarization of electrons for small electronic energies, where the electr on-spin polarization exhibits considerable wave-vector-dependent features.