S. Dickmann et al., Magnetophonon resonance in photoluminescence excitation spectra of magnetoexcitons in GaAs/Al0.3Ga0.7As superlattice, PHYS REV B, 62(4), 2000, pp. 2743-2750
A strong increase in the intensity of the peaks of excited magnetoexciton (
ME) states in the photoluminescence excitation (PLE) spectra recorded for t
he ground heavy-hole magnetoexcitons (of the 1sHH type) has been found in a
GaAs/Al0.3Ga0.7As superlattice in strong magnetic field B applied normal t
o the sample layers. While varying B, the intensities of the PLE peaks have
been measured as functions of energy separation Delta E between excited ME
peaks and the ground state of the system. The resonance profiles have been
found to have maxima at Delta E-max close to the energy of the GaAs LO pho
non. However, the value of Delta E-max depends on quantum numbers of the ex
cited ME state. The revealed very low quantum efficiency of the investigate
d sample allows us to ascribe the observed resonance to the enhancement of
the nonradiative magnetoexciton relaxation rate arising due to LO-phonon em
ission. The presented theoretical model, being in a good agreement with exp
erimental observations, provides a method to extract 1sHH magnetoexciton "i
n-plane" dispersion from the dependence of Delta E-max on the excited ME st
ate quantum numbers.