Multicomponent bismuth telluride low-dimensional materials. Growth by HWE and thermoelectric properties

Thermoelectric properties of bismuth telluride (Bi2Te3) based materials are interesting for efficient solid state cooling applications around 300 K. T hey can be used for microsensors applications such as vacuum gauges, dew po int measurements or gas flows sensors. The recent interest in the thin film growth of Bi2Te3 based materials is du e to the proposed idea that the use of the quantum webs structure may enhan ce the dimensionless thermoelectric figure of merit Z. Recent experimental results on the PbTe/Pb1-xEuxTe superlattice structures seem to be in accord ance with the former concepts [1-5]. Hot Wall Epitaxy have been demonstrated to be a suitable technique in chalc ogenides growth. These films are formed in a closed chamber, that makes pos sible to keep substrates at relatively high temperature T-s without selecti ve loss of individual components from condensate. In this paper we report on the growing model of Bi2Te3 thin films elaborate d by the Hot Wall Epitaxy technique, their thermoelectric characterization (electrical conductivity sigma, Hall coefficient R-H and Hall mobility mu(h ), Seebeck coefficient S) as well those of ternary alloys.