Extended hydrodynamical model of carrier transport in semiconductors

A hydrodynamical model based on the theory of extended thermodynamics is pr esented for carrier transport in semiconductors. Closure relations for flux es are obtained by employing the maximum entropy principle. The production terms are modeled by fitting the Monte Carlo data for homogeneously doped s emiconductors. The mathematical properties of the model are studied. A suitable numerical method, which is a generalization of the Nessyahu-Tadmor scheme to the nonh omogeneous case, is provided. The validity of the constitutive relations has been assessed by comparing t he numerical results with detailed Monte Carlo simulations.