Behaviour of textured Ir layers exposed to the HFCVD environment of diamond

Citation
S. Pecoraro et al., Behaviour of textured Ir layers exposed to the HFCVD environment of diamond, SURF SCI, 461(1-3), 2000, pp. 129-136
Citations number
31
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
461
Issue
1-3
Year of publication
2000
Pages
129 - 136
Database
ISI
SICI code
0039-6028(20000801)461:1-3<129:BOTILE>2.0.ZU;2-T
Abstract
The growth of heteroepitaxied films is a great challenge for diamond microe lectronics applications and iridium is one of the better substrates to achi eve it. In the present study, the early stages of diamond growth on iridium have been studied by electron spectroscopy [Auger electron spectroscopy (A ES), X-ray photoemission spectroscopy (XPS)]. A graphite layer is rapidly f ormed and its equivalent thickness was estimated from XPS data to some five to 10 monolayers. Then, the graphite layers are strongly modified by the h ighly reactive hydrogen radicals coming from the plasma. This induces a reh ybridisation process into tetrahedral sp(3) configuration which could const itute suitable sites for further diamond nucleation. (C) 2000 Elsevier Scie nce B.V. All rights reserved.