During epitaxial growth of MnAs on GaAs(001) by molecular-beam epitaxy (MBE
) the surface exhibits various reconstructions depending on the growth cond
itions. These reconstructions have been studied during growth by reflection
high-energy electron diffraction (RHEED) and reflectance difference spectr
oscopy (RDS). A feature sensitive to the surface structure was identified i
n the RD spectra. After growth, the (1 x 2) and (1 x 1) reconstructions wer
e cooled down to room temperature and imaged in ultrahigh vacuum with a con
ventional scanning tunneling microscope (STM). Atomic-scale images of these
surfaces are presented. (C) 2000 Elsevier Science B.V. All rights reserved
.