Surface morphology and structural observation of laser interference crystallized a-Si : H/a-SiNx : H multilayers

Authors
Wang, L Li, J Huang, XF Li, QL Yin, XB Fan, WB Xu, J Li, W Li, ZF Zhu, JM Wang, M Liu, ZG Chen, KJ
Citation
L. Wang et al., Surface morphology and structural observation of laser interference crystallized a-Si : H/a-SiNx : H multilayers, APPL SURF S, 165(2-3), 2000, pp. 85-90
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
165
Issue
2-3
Year of publication
2000
Pages
85 - 90
Database
ISI
SICI code
0169-4332(20000922)165:2-3<85:SMASOO>2.0.ZU;2-I
Abstract
Combined with atomic force microscope (AFM), micro-Raman spectroscope, cros s-section transmission electron microscope (TEM) and high resolution electr on microscope (HREM) analyses, the surface morphology and structures of a-S i:H/a-SiNx,:H multilayers (MLs), irradiated by excimer laser through the ph ase shifting mask grating, are investigated. It is found that Si nanocrysta llites (nc-Si) are formed within the initial a-Si:H sublayers, and the size of the grains can be controlled due to the constrained crystallization eff ect. And it is possible to use this laser interference crystallization (LIC ) method to get the periodic distribution of nc-Si in both transverse and l ongitudinal direction. (C) 2000 Elsevier Science B.V. All rights reserved.