Morphology and microstructure of the Ar+-ion sputtered (0001) alpha-Al2O3 surface

Authors
Akatsu, T Scheu, C Wagner, T Gemming, T Hosoda, N Suga, T Ruhle, M
Citation
T. Akatsu et al., Morphology and microstructure of the Ar+-ion sputtered (0001) alpha-Al2O3 surface, APPL SURF S, 165(2-3), 2000, pp. 159-165
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
165
Issue
2-3
Year of publication
2000
Pages
159 - 165
Database
ISI
SICI code
0169-4332(20000922)165:2-3<159:MAMOTA>2.0.ZU;2-Y
Abstract
The morphology and microstructure of Ar+-ion bombarded (0001) alpha-Al2O3 s urfaces were studied by employing analytical electron microscopy (AEM) and high-resolution transmission electron microscopy (HRTEM). Surface bombardme nt with 1 keV Ar+-ions resulted in the formation of a ca. 3-nm thick gamma- Al2O3 layer with a high density of structural defects. A well-defined epita xial orientation relationship between the gamma-Al2O3 layer and the substra te was observed: (0001)(alpha) parallel to (111)(gamma), [<10(1)over bar 0> ], parallel to [110](gamma), and [<11(2)over bar 0>](alpha) parallel to +/- [<11(2)over bar >](gamma). (C) 2000 Published by Elsevier Science B.V.