Epitaxial growth of Bi4Ti3O12 on alpha-Al2O3(012) substrates by CVD using metal chloride precursors

Authors
Schuisky, M Skoog, R Harsta, A
Citation
M. Schuisky et al., Epitaxial growth of Bi4Ti3O12 on alpha-Al2O3(012) substrates by CVD using metal chloride precursors, CHEM VAPOR, 6(4), 2000, pp. 177-180
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
6
Issue
4
Year of publication
2000
Pages
177 - 180
Database
ISI
SICI code
0948-1907(200008)6:4<177:EGOBOA>2.0.ZU;2-M