In-situ gas-phase Fourier transform infrared spectroscopy (FTIR) studies of
thermally activated processes occurring in the metal-organic chemical vapo
r deposition (MOCVD) of La(hfac)(3).diglyme provide evidence that the precu
rsor can be evaporated from the melt up to 130 degrees C without side decom
position processes. In contrast, under typical operating conditions in hot-
wall MOCVD processes, the precursor undergoes different demolition pathways
. Under Ar, it is stable up to 300 degrees C. At higher temperatures, decom
position involves the beta-diketonate array leaving the glyme coordination
intact. Materials thus deposited have greater carbon contamination, Introdu
cing O-2 into the stream promotes diglyme dissociation and prevents carbon
contamination in the film. Thermally activated processes show close analogi
es with those of the free Hhfac ligand. Fluorinated ketones and acylketenes
are formed as the main decomposition products. Complementary insights into
the factors responsible for the contamination associated with the depositi
on processes have been obtained by X-ray photoelectron spectroscopy (XPS) s
tudies.