The influence of the electron effective mass mismatch on the intraband optical transition in a semiconductor superlattice

Authors
Zheng, YS Wu, HZ Lu, TQ Pak, HC
Citation
Ys. Zheng et al., The influence of the electron effective mass mismatch on the intraband optical transition in a semiconductor superlattice, COMM TH PHY, 34(1), 2000, pp. 39-42
Citations number
5
Categorie Soggetti
Physics
Journal title
COMMUNICATIONS IN THEORETICAL PHYSICS
ISSN journal
02536102 → ACNP
Volume
34
Issue
1
Year of publication
2000
Pages
39 - 42
Database
ISI
SICI code
0253-6102(20000730)34:1<39:TIOTEE>2.0.ZU;2-G
Abstract
The effective mass mismatch of a conduction band electron in a semiconducto r superlattice renormalizes the electron confining potential. Taking this e ffect into account we calculate the absorption coefficient of the intraband optical transition in an InGaAs/InAlAs superlattice. We find that the elec tron effective mass mismatch causes a notable broadening of spectrum linewi dth, which can well account for the experimental result.