Light emitting diodes fabricated from liquid phase epitaxial InAs/InAsxP1-x-ySby/InAsx ' P1-x '-y ' Sby ' and InAs/InAs1-xSbx multi-layers

Mid-infrared light emitting diodes (LED) in 3-5 mu m wavelength range have been fabricated from InAs/InAsxP1-x-ySby/InAsxP1-x-ySby composition graded layer and InAs/InAsSb multilayers. The heterostructures were grown by liqui d phase epitaxy (LPE) between 600 and 520 degrees C. An output power of 3.1 mW at 11K and of 10 mu W at 300 K have been obtained under a peak current of 100 mA (50 % duty ratio) from InAsSb multilayers. Recombination mechanis ms for these diodes were studied by temperature-dependent emission spectra using Fourier transform infrared (FTIR) measurement system with double modu lation. The output powers of the LEDs decrease rapidly at temperatures abov e 153 K suggesting that nonradiative and Auger recombinations are the main limitation of the device performance at high temperatures.