Atomic layer epitaxy of vanadium oxide thin films and electrochemical behavior in presence of lithium ions

Vanadium oxide films have been deposited by atomic layer epitaxy (ALE) at t emperatures ranging from 50 to 200 degrees C from vanadyl triisopropoxide a nd water precursors. The growth mechanism was studied in situ by quartz cry stal microgravimetry allowing us to distinguish different growth regimes. A LE growth extends from near room temperature to similar to 150 degrees C. F or higher temperatures there was a change in the ALE regime, followed by a different chemical vapor deposition regime involving the direct decompositi on of the vanadium precursor at temperatures higher than ca. 180 degrees C. As-grown films were amorphous and crystallized easily during thermal post- treatments. Films annealed at 400 degrees C offered excellent electrochemic al stability and cyclability for lithium ion insertion/deinsertion between 3 and 3.8 V. (C) 2000 The Electrochemical Society. S1099-0062(00)04-047-5. All rights reserved.