8W continuous wave operation of InGaAsN lasers at 1.3 mu m

The authors report on the generation of 8W of optical power at 1.3 mu m und er continuous wave (CW) operation from a 100 mu m aperture of an InGaAsN si ngle quantum well laser. The laser was facet-coated and the active region m aintained at 10 degrees C by heatsinking. A preliminary lifetime test produ ced no noticeable degradation of laser characteristics after 1000 hours of CW operation at an output power of 1.5W. Threshold current densities as low as 335A/cm(2) were measured on such broad area lasers. These values are a significant improvement over previously published data for lasers in the In GaAsN material system.