InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 mu m

Pulsed lasing at 1.31 mu m via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The structures are grown directly on GaA s substrates and when fabricated include selectively oxidised AlO current a pertures, intracavity metal contacts, and AlO/GaAs distributed Bragg reflec tors. Experimental devices operate pulsed at room temperature with threshol d currents below 2mA and differential slope efficiencies above 40%.