Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 mu m

Selectively oxidised vertical-cavity lasers emitting at 1294nm using InGaAs N/GaAs quantum wells which exhibit continuous wave operation at and above r oom temperature are reported for the first time. The lasers employ two n-ty pe Al0.94Ga0.06As/GaAs distributed Bragg reflectors each with a selectively oxidised current aperture adjacent to the optical cavity, and the top outp ut mirror contains a tunnel junction to inject holes into the active region . Continuous wave singlemode lasing is observed up to 55 degrees C. These l asers exhibit the longest wavelength reported to date for vertical-cavity s urface lasers grown on GaAs substrates.