Citation
Gw. Yoon et Jd. Park, Fabrication of ZnO-based film bulk acoustic resonator devices using W/SiO2multilayer reflector, ELECTR LETT, 36(16), 2000, pp. 1435-1437
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
16
Year of publication
2000
Pages
1435 - 1437
Database
ISI
SICI code
0013-5194(20000803)36:16<1435:FOZFBA>2.0.ZU;2-4
Abstract
A ZnO-based fdm bulk acoustic resonator (FBAR) with a W/SiO2 multilayer ref
lector has been fabricated using a two-step ZnO deposition. The FEAR showed
a large return loss of 35dB at similar to 2GHz and a high quality factor (
high-Q) of similar to 4000. The resonance characteristics depended largely
on the multilayer reflector and ZnO film.