High-frequency analysis of linearity improvement technique of common-emitter transconductance stage using a low-frequency-trap network

It is well known that a low-frequency-trap network can be added to the base of an inductively-degenerated common-emitter transconductance stage to imp rove its third-order intercept point, but not its l-dB compression point. H igh-frequency equations in Volterra series are used to explain this phenome non. Analytical and experimental results show that the third-order intercep t point increases with the capacitance within the low-frequency-trap networ k.