Kl. Fong, High-frequency analysis of linearity improvement technique of common-emitter transconductance stage using a low-frequency-trap network, IEEE J SOLI, 35(8), 2000, pp. 1249-1252
It is well known that a low-frequency-trap network can be added to the base
of an inductively-degenerated common-emitter transconductance stage to imp
rove its third-order intercept point, but not its l-dB compression point. H
igh-frequency equations in Volterra series are used to explain this phenome
non. Analytical and experimental results show that the third-order intercep
t point increases with the capacitance within the low-frequency-trap networ
k.