Tradeoff between interconnect capacitance and RC delay variations induced by process fluctuations

Authors
Citation
N. Shigyo, Tradeoff between interconnect capacitance and RC delay variations induced by process fluctuations, IEEE DEVICE, 47(9), 2000, pp. 1740-1744
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
9
Year of publication
2000
Pages
1740 - 1744
Database
ISI
SICI code
0018-9383(200009)47:9<1740:TBICAR>2.0.ZU;2-H
Abstract
This paper describes the influence of the process fluctuations such as the critical dimension (CD) variation upon the interconnect capacitance C and R C delay. It is found that there is a tradeoff between C and RC delay variat ions because of the fringing capacitance. An interconnect design guideline to reduce C and/or RC delay variations is proposed, Also, C and RC delay va riations for Cu interconnect are discussed.