M. Sanden et al., A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors, IEEE DEVICE, 47(9), 2000, pp. 1767-1769
A new test structure for parameter extraction is presented and implemented
in a double-polysilicon bipolar junction transistor (BJT) process, The test
structure is basically a real BJT, but without the intrinsic base. The tes
t structure allows extraction of the base, collector and emitter impedances
, and the extrinsic base-collector capacitance.