A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors

Authors
Sanden, M Zhang, SL Grahn, JV Ostling, M
Citation
M. Sanden et al., A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors, IEEE DEVICE, 47(9), 2000, pp. 1767-1769
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
9
Year of publication
2000
Pages
1767 - 1769
Database
ISI
SICI code
0018-9383(200009)47:9<1767:ANTSFE>2.0.ZU;2-#
Abstract
A new test structure for parameter extraction is presented and implemented in a double-polysilicon bipolar junction transistor (BJT) process, The test structure is basically a real BJT, but without the intrinsic base. The tes t structure allows extraction of the base, collector and emitter impedances , and the extrinsic base-collector capacitance.