GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation

Multiple vertically stacked GaAs/AlxGa1-xAs quantum wires laser diodes have been fabricated via MOVPE on v-grooved Galls substrates, The devices are e lectrically isolated by oxygen ion implantation, utilizing the nonplanarity of the device. The process is self-aligning and requires no masking, yield ing significant simplification in the device fabrication. Optimum implant c onditions are determined. A quantum internal efficiency of 65.8% is measure d for the optimum implanted devices, which exhibit a 5.5 mA threshold curre nt.