A low-power GaAs front-end IC with current-reuse configuration using 0.15-mu m-gate MODFET's

Authors
Ishida, H Koizumi, H Miyatsuji, K Takenaka, H Tanaka, T Ueda, D
Citation
H. Ishida et al., A low-power GaAs front-end IC with current-reuse configuration using 0.15-mu m-gate MODFET's, IEEE MICR T, 48(8), 2000, pp. 1303-1307
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
48
Issue
8
Year of publication
2000
Pages
1303 - 1307
Database
ISI
SICI code
0018-9480(200008)48:8<1303:ALGFIW>2.0.ZU;2-X
Abstract
We have developed a novel current-reuse configuration of a front-end integr ated circuit (IC), where the current can be reused in the whole circuit blo cks that are a low-noise amplifier, local amplifier, and mixer. The power d issipation of the front-end IC is reduced by the factor of three as compare d to conventional front-end IC's. Excellent RF performance such as conversi on gain of 30 dB and noise figure of 1.6 dB at 1.5 GHz is attained under th e conditions of the supply voltage and current of 3.6 V and 3 mA,. respecti vely.