HEMT-HBT matrix amplifier

A novel matrix amplifier using simultaneously high electron-mobility transi stors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed i n this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT ma trix amplifier presents a notable lower de power consumption without remark able gain and bandwidth Seduction, maintaining the advantage of using HEMT' s in the first tier, A theory to demonstrate that the amplifier performance can be optimize if the HBT's in the second tier are properly chosen is als o proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix a mplifier, and HBT matrix amplifier is also presented.