Focus characterization using end of line metrology

Citation
P. Leroux et al., Focus characterization using end of line metrology, IEEE SEMIC, 13(3), 2000, pp. 322-330
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
ISSN journal
08946507 → ACNP
Volume
13
Issue
3
Year of publication
2000
Pages
322 - 330
Database
ISI
SICI code
0894-6507(200008)13:3<322:FCUEOL>2.0.ZU;2-U
Abstract
A new method is introduced to measure relative focus using conventional opt ical overlay instruments, Optical end of line metrology (OELM), is based on patterning a wide frame in which adjacent sides are constructed of submicr on sized lines that run perpendicular to the center opening. Because trunca tion is size dependent, line and space features exhibit significantly more line shortening effects than the solid sections. When measured with a conve ntional optical overlay tool, the difference in line shortening between the solid and line and space sections are measured as an alignment offset, whi ch is a relative measure of actual line shortening, Reproducibility for mea suring the apparent misalignment of these modified box-in-box structures wa s 3 nm (3 sigma(est)), which is similar to the repeatability for measuring conventional resist box in box alignment boxes. Truncation is sensitive to focus and the utility for using OELM toward char acterizing focus-dependent lens parameters was investigated. Estimated 3 si gma for calculating best focus and astigmatism were 0.04 mu m and 0.01 mu m , respectively. Focus corrections were accurate to 0.05 mu m within +/-0.3 mu m of best focus, Additionally, a general method is presented to estimate the error in the calculated best focus.