This paper presents a control scheme for run-to-run control of chemical-mec
hanical polishing (CMP). The control scheme tracks both device pattern depe
ndent and equipment induced disturbances. The structure of the controller i
s such that sensitivity to qual (unpatterned blanket oxide) wafer frequency
is minimized. Additionally, prethickness variation and metrology delay are
accounted for in the design. Results from applying this scheme in volume p
roduction are presented.