Scattering rates in a semiconductor heterostructure: A variational wavefunction approach

We calculate the conduction electron scattering rates in a model for a semi conductor heterostructure (SH) of nanometric dimensions. Electron interacti on with polar optical phonons (POP) is considered by applying POP modes ana lyzed in previous papers. The SH is modeled as a two interfaces slab, one o f them mechanically free and the other one an interface with a semi infinit e semiconductor. Only intraband electron transitions within the first subba nd are studied and a variational approach is introduced for the electron wa vefunction. Comparisons with previous works on the subject are made.