Quantifying the oxidation of AlN using electron energy loss spectroscopy

The successful exploitation of selective oxidation in III-V semiconducting devices depends on the ability to control the nature and extent of the oxid ation process over distances of the order of 10 nm. This paper reports an a nalytical method capable of measuring the nature and extent of the oxidatio n process in AlN. Analytical electron microscopy and, in particular the nea r-edge fine structure present on characteristic edges in electron energy lo ss spectroscopy, is used to measure the extent of surface oxidation of AlN powder in air at room temperature. The oxidation was found to result in the formation of a surface oxidation layer of amorphous Al2O3 and the retentio n of some of the N produced, most likely in the form of N-2 gas. Applicatio n of the technique to nanoscale analysis of semiconductors is considered.