The successful exploitation of selective oxidation in III-V semiconducting
devices depends on the ability to control the nature and extent of the oxid
ation process over distances of the order of 10 nm. This paper reports an a
nalytical method capable of measuring the nature and extent of the oxidatio
n process in AlN. Analytical electron microscopy and, in particular the nea
r-edge fine structure present on characteristic edges in electron energy lo
ss spectroscopy, is used to measure the extent of surface oxidation of AlN
powder in air at room temperature. The oxidation was found to result in the
formation of a surface oxidation layer of amorphous Al2O3 and the retentio
n of some of the N produced, most likely in the form of N-2 gas. Applicatio
n of the technique to nanoscale analysis of semiconductors is considered.