Nitrogen incorporation in diamond films homoepitaxially grown by chemical vapour deposition

Authors
Iakoubovskii, K Adriaenssens, GJ Vohra, YK
Citation
K. Iakoubovskii et al., Nitrogen incorporation in diamond films homoepitaxially grown by chemical vapour deposition, J PHYS-COND, 12(30), 2000, pp. L519-L524
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
30
Year of publication
2000
Pages
L519 - L524
Database
ISI
SICI code
0953-8984(20000731)12:30<L519:NIIDFH>2.0.ZU;2-E
Abstract
Photoluminescence, optical absorption and electron spin-resonance results a re reported for diamond films: homoepitaxially grown by chemical vapour dep osition on (100)-oriented natural IIa diamond. Measured dependencies of the corresponding signals on the growth temperature in the range 950-2100 degr ees C suggest that while most of the nitrogen is present in our films as si ngle atoms, a small part(about 10(-3) of all of the nitrogen) could be inco rporated as N-2 molecules.