Raman characterization of GaN synthesized by N implantation in GaAs substrate

GaN material was synthesized by implantation of N ion into a GaAs (001) sem i-insulating substrate. After implantation, different annealing treatments were applied and the results were investigated using UV Raman spectroscopy. More particularly, temperature and time treatments ranging between 500 and 950 degrees C and 1 and 20 min, respectively, were studied. The results of these studies showed that, by using appropriate annealing conditions, a hi gh-quality GaN crystalline layer can be obtained on GaAs substrates, Copyri ght (C) 2000 John Wiley & Sons, Ltd.