Characterization of sub-30 nm p(+)/n junction formed by plasma ion implantation

We have investigated the electrical characteristics and junction depth and defect of ultrashallow junctions formed using plasma doping. Compared with ultralow energy boron ion implantation at 500 eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The jun ction depths of the plasma-doped samples were 15 and 33 nm after annealing for 10 s at 900 and 950 degrees C, respectively. For the same junction dept h, the sheet resistance of the B2H6 plasma-doped sample is an order of magn itude less than that of the 500 eV B ion implanted sample. Based on cross-s ectional transmission electron microscope, deep level transient spectroscop y, and junction leakage current, the defects formed by the B2H6 plasma dopi ng process can be completely removed by annealing at 950 degrees C for 10 s . (C) 2000 The Electrochemical Society. All rights reserved.