Properties of semi-insulating GaAs : Fe grown by hydride vapor phase epitaxy

In this paper we analyze GaAs grown by hydride vapor phase epitaxy (HVPE) a nd doped with four different iron concentrations between 4 X 10(16) and 4.5 X 10(20) cm(-3). From temperature dependent current-voltage measurements w e observed the highest resistivity in the lowest doped sample. We also quan tified the activation energy. These results together with those of time res olved photoluminescence measurements indicate that in the sample with the l owest Fe concentration, EL2 may be dominant. From the analysis of the time resolved photoluminescence measurements, the intrinsic EL2 concentration an d the electron and hole capture cross sections of Fe in GaAs were estimated . (C) 2000 The Electrochemical Society. S0013-4651(00)02-041-3. All rights reserved.