The effect of Er concentration on the morphology and photoluminescence of GaN : Er

The surface morphology and the room temperature 1.54 mu m photoluminescence (PL) intensity have been investigated as a function of Er flux in GaN:Er g rown by merallorganic molecular beam epitaxy. Unlike AIN, GaN:Er showed imp roved surface smoothness as evidenced by atomic force microscopy and scanni ng electron microscopy, with root mean square roughness values improving fr om 18.1 to 2.0 nm as the Er cell temperatures were increased from 1250 to 1 450 degrees C. Similarly the PL emission increased with increasing Er conce ntration and showed no evidence of saturation or concentration quenching. ( C) 2000 The Electrochemical Society, S0013-3651(00)01-071-5. All rights res erved.